The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 1993 edition

Marc Notes: Proceedings of the Second Symposium on the Physics and Chemistry of the SiOb2 and Si-SiOb2 Interface, held May 18-21, 1992, in St. Louis, Missouri, sponsored by the Electronics Division and the Dielectric Science and Technology Division of the Electrochemical Society.; Includes bibliographical references and indexes. Table of Contents: Thermal Oxidation Mechanisms and Modeling: Silicon Oxides and Oxidation; A. M. Stoneham. Novel Oxidation Methods and Characterization: New Approach to Chemically Enhanced Oxidation; R. J. Jaccodine. Deposition and Properties of SiO2: Low Temperature Synthesis and Characterization of Silicon Dioxide Films; G. S. Chakravarthy, et al. Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition: Pre-Gate Oxide Si Surface Control; M. Morita, T. Ohmi. Chemical, Structural, and Microroughness Effects at the SiSiO2 Interface: Dependence of Surface Microroughness on Types of Silicon Substrates; T. Ohmi, et al. Novel Structures, Processes, and Phenomena: Properties of Simox and Related Systems; S. Cristoloveanu, T. Ouisse. Defects and Hot-Carrier Induced Damage in SiSiO2 Systems: Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems. 56 additional articles. Index. Publisher Marketing: Proceedings of the Symposium held at the 181st Meeting of The Electrochemical Society in St. Louis, May 1992. The volume contains most of the 59 papers presented at the symposium, and is divided into eight chapters, approximating the organization of the symposium: thermal oxidation mechanisms and mo