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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change Hai Li 1. utgave
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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change
Hai Li
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
203 pages, 39; 10 Tables, black and white; 175 Illustrations, black and white
| Media | Bøker Pocketbok (Bok med mykt omslag og limt rygg) |
| Utgitt | 29. mars 2017 |
| ISBN13 | 9781138076631 |
| Utgivere | Taylor & Francis Ltd |
| Antall sider | 204 |
| Mål | 150 × 220 × 10 mm · 453 g |
| Språk | Engelsk |
