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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics 2011 edition
Viktor Sverdlov
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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics 2011 edition
Viktor Sverdlov
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
268 pages, 101 black & white illustrations, 50 black & white tables, biography
| Media | Bøker Innbunden bok (Bok med hard rygg og stivt omslag) |
| Utgitt | 24. november 2010 |
| ISBN13 | 9783709103814 |
| Utgivere | Springer Verlag GmbH |
| Antall sider | 252 |
| Mål | 170 × 244 × 15 mm · 635 g |
| Språk | Fransk |
