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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Softcover reprint of the original 1st ed. 2011 edition
Viktor Sverdlov
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Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics Softcover reprint of the original 1st ed. 2011 edition
Viktor Sverdlov
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
252 pages, 50 Tables, black and white; XIV, 252 p.
| Media | Bøker Pocketbok (Bok med mykt omslag og limt rygg) |
| Utgitt | 23. august 2016 |
| ISBN13 | 9783709119334 |
| Utgivere | Springer Verlag GmbH |
| Antall sider | 252 |
| Mål | 430 g |
| Språk | Tysk |
